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PolarTM HiPerFETTM Power MOSFET
IXFT88N30P IXFH88N30P IXFK88N30P
VDSS ID25 trr
RDS(on)
= =
300V 88A 40m 200ns
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight 1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247&TO-264) TO-268 TO-247 TO-264 Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C Maximum Ratings 300 300 20 30 88 75 220 60 2 10 600 -55 to +150 +150 -55 to +150 300 260 1.13/10 4 6 10 V V V V A A A A J V/ns W C C C C C Nm/lb.in. g g g
TO-268 (IXFT)
G S Tab
TO-247(IXFH)
G
D
S
Tab
TO-264 (IXFK)
G
D
S
Tab
G = Gate S = Source Features
D = Drain Tab = Drain
International Standard Packages Fast Intrinsic Diode Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages High Power Density Easy to Mount Space Savings
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250A VDS = VGS, ID = 4mA VGS = 20V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125C VGS = 10V, ID = 0.5 * ID25, Note 1
Characteristic Values Min. Typ. Max. 300 2.5 5.0 V V 100 nA 25 A 250 A 40 m
Applications DC-DC Coverters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC and DC Motor Drives Uninterrupted Power Supplies High Speed Power Switching Applications
DS99216F(11/09)
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXFT88N30P IXFH88N30P IXFK88N30P
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS TO-247 TO-264 0.21 0.15 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 60A RG = 3.3 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 0.5 * ID25, Note 1 Characteristic Values Min. Typ. Max. 40 60 6300 950 190 25 24 96 25 180 44 90 S pF pF pF ns ns ns ns nC nC nC 0.21 C/W C/W C/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
TO-264 (IXFK) Outline
Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr QRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = IS, VGS = 0V, Note 1 IF = 25A, -di/dt = 100A/s, VR = 100V, VGS = 0V 100 0 .6 Characteristic Values Min. Typ. Max. 88 220 1.5 200 A A V ns C
TO-247 (IXFH) Outline
1
2
3
P
Note 1. Pulse test, t 300s, duty cycle, d 2%.
e
Terminals: 1 - Gate 3 - Source
2 - Drain Tab - Drain
TO-268 (IXFT) Outline
Dim.
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXFT88N30P IXFH88N30P IXFK88N30P
Fig. 1. Output Characteristics @ T J = 25C
90 80 70 VGS = 10V 9V 8V 200 180 160 7V 140 8V 120 100 80 60 40 5V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 20 5V 0 0 2 4 6 8 10 12 14 16 18 20 6V 7V VGS = 10V 9V
Fig. 2. Extended Output Characteristics @ T J = 25C
ID - Amperes
50 40 30 20 10 0 6V
ID - Amperes
60
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ T J = 125C
90 80 70 VGS = 10V 9V 8V 3.2
Fig. 4. RDS(on) Normalized to ID = 44A Value vs. Junction Temperature
VGS = 10V
2.8
R DS(on) - Normalized
7V
2.4
ID - Amperes
60 50 40 30 20 10 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 5V 6V
I D = 88A
2.0 1.6 I D = 44A
1.2
0.8
0.4 -50 -25 0 25 50 75 100 125 150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 44A Value vs. Drain Current
3.6 VGS = 10V 3.2 TJ = 125C 80 70 60
Fig. 6. Maximum Drain Current vs. Case Temperature
External Lead Current Limit
R DS(on) - Normalized
2.8 2.4 2.0 1.6
ID - Amperes
TJ = 25C 0 20 40 60 80 100 120 140 160 180 200
50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150
1.2 0.8
ID - Amperes
TC - Degrees Centigrade
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXFT88N30P IXFH88N30P IXFK88N30P
Fig. 7. Input Admittance
160 140 120 100 80 60 40 20 20 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 10 0 0 20 40 60 80 100 120 140 160 180 TJ = 125C 25C - 40C 100 TJ = - 40C 90 80
Fig. 8. Transconductance
g f s - Siemens
70 60 50 40 30
ID - Amperes
25C
125C
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
240 10 VDS = 150V 200 8 I D = 44A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
160
VGS - Volts
TJ = 125C TJ = 25C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
6
120
4
80
40
2
0
0 0 20 40 60 80 100 120 140 160 180 200
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
10,000 1,000
Fig. 12. Forward-Bias Safe Operating Area
Capacitance - PicoFarads
Ciss 100
RDS(on) Limit 1ms 10ms
100s
25s
Coss 1,000
ID - Amperes
DC
10 Crss TJ = 150C TC = 25C Single Pulse 1 0 5 10 15 20 25 30 35 40 1 10 100 1000
f = 1 MHz
100
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT88N30P IXFH88N30P IXFK88N30P
Fig. 13. Maximum Transient Thermal Impedance
1.000
Z (th )J C - C / W
0.100
0.010
0.001 0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_88N30P(8S)11-18-09-A

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